M48T512Y 采用5.0/3.3V,4Mbit(512Kbit × 8)计时器?SRAM
The M48T512Y/V TIMEKEEPER? RAM is a 512 Kb x 8 non-volatile static RAM and realtime
clock organized as 524,288 words by 8 bits. The special DIP package provides a fully
integrated battery backup memory and real-time clock solution.
The M48T512Y/V directly replaces industry standard 512 Kb x 8 SRAMs. It also provides
the non-volatility of Flash without any requirement for special WRITE timing or limitations on
the number of WRITEs that can be performed.
M48T512Y 产品特性:
- Integrated ultra-low power SRAM, real-time
clock, power-fail control circuit, battery, and
crystal
- BCD coded year, month, day, date, hours,
minutes, and seconds
- Automatic power-fail chip deselect and write
protection
- Write protect voltages:
(VPFD = Power-fail deselect voltage)
– M48T512Y: VCC = 4.5 to 5.5 V
4.2 V ≤ VPFD ≤ 4.5 V
– M48T512V: VCC = 3.0 to 3.6 V
2.7 V ≤ VPFD ≤ 3.0 V
- Conventional SRAM operation; unlimited write
cycles
- Software controlled clock calibration for high
accuracy applications
- 10 years of data retention and clock operation
in the absence of power
- Pin and function compatible with industry
standard 512 K x 8 SRAMS
- Self-contained battery and crystal in DIP
package
M48T512Y 技术支持与电子电路设计开发资源下载
- M48T512Y 数据手册DataSheet下载.PDF
- 相关产品选型( Excel 文档格式)
- 非易失性RAM产品选择指南 (PDF, 800Kb)
- NVRAM选型指南
- ST和竞争对手Atmel、Macronix、Holtek、Oki、Winbond的对照 (产品彩页, PDF)
- RFID和射频内存产品 . PDF
- 提升灵活性与world'sn ° 1 EEPROM的供应商. PDF
- 意法半导体应用支持. PDF
- 汽车级
半导体器件. PDF
- 周围半导体
机顶盒应用. PDF