低噪声GaAs HEMT
| TypeNo. | DataSheet | Availability Status | Noise Figure (dB) |
Associated Gain (dB) |
Frequency (GHz) |
Drain-Source Voltage (V) |
Drain Current (mA) |
S-parameter | Remarks |
| MGF4931AM | MGF4931AM | MP | 0.6(typ) 0.8(max) | 10.0(min) 11.5(typ) | 12.0 | 2.0 | 7.5 | mgf4931am.s2p | G |
| MGF4934BM | MGF4934BM | MP | 0.50(typ) 0.8(max) | 11.5(min) 12.5(typ) | 12.0 | 2.0 | 10.0 | mgf4934bm.s2p | G |
| MGF4934CM | MGF4934CM |  |
0.50(typ) 0.75(max) | 11.5(min) 13.0(typ) | 12.0 | 2.0 | 10.0 | mgf4934cm.s2p | G |
| MGF4935AM | MGF4935AM | |
0.45(typ) 0.65(max) | 11.0(min) 12.0(typ) | 12.0 | 2.0 | 10.0 | mgf4935am.s2p | G |
| MGF4941AL | MGF4941AL | MP | 0.35(typ) 0.5(max) | 12.0(min) 13.5(typ) | 12.0 | 2.0 | 10.0 | mgf4941al.s2p | G |
| MGF4953A | MGF4953A | MP | 0.4(typ) 0.5(max) | 12.0(min) 13.0(typ) | 12.0 | 2.0 | 10.0 | mgf4953a.s2p | G |
| MGF4953B | MGF4953B | MP | 0.55(typ) 0.8(max) | 9.0(min) 10.5(typ) | 20.0 | 2.0 | 10.0 | mgf4953b.s2p | G |
| MGF4961B | MGF4961B | |
0.70(typ) 0.95(max) | 11.5(min) 13.5(typ) | 20.0 | 2.0 | 10.0 | mgf4961b.s2p | G |
| TypeNo. | DataSheet | Noise Figure (dB) |
Associated Gain (dB) |
Frequency (GHz) |
Drain-Source Voltage (V) |
Drain Current (mA) |
S-parameter | Remarks |
| MGF4934AM | MGF4934AM | 0.50(typ) 0.8(max) | 11.5(min) 12.5(typ) | 12.0 | 2.0 | 10.0 | mgf4934am.s2p | G |
| MGF4951A | MGF4951A | 0.4(typ) 0.5(max) | 11.0(min) 12.0(typ) | 12.0 | 2.0 | 10.0 | mgf4951a.s2p | G |
| MGF4952A | MGF4952A | 0.6(typ) 0.8(max) | 11.0(min) 12.0(typ) | 12.0 | 2.0 | 10.0 | mgf4951a.s2p | G |
三菱低噪声砷化镓场效应管技术支持
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