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ISL21009BFB850 High Voltage Input Precision, Low Noise FGATM Voltage References

The ISL21009 FGATM voltage references are extremely low power, high precision, and low noise voltage references fabricated on Intersil’s proprietary Floating Gate Analog technology. The ISL21009 features very low noise (4.5μVP-P for 0.1Hz to 10Hz), low operating current (180μA, Max), and 3ppm/°C of temperature drift. In addition, the ISL21009 family features guaranteed initial accuracy as low as ±0.5mV.

This combination of high initial accuracy, low power and low output noise performance of the ISL21009 enables versatile high performance control and data acquisition applications with low power consumption.

ISL21009BFB850 特点
ISL21009BFB850 应用
ISL21009BFB850 芯片订购指南
芯片型号 VOUT OPTION (V) GRADE 温度范围(°C) PACKAGE (Pb-Free)
ISL21009BFB812Z 1.25 ±0.5mV, 3ppm/°C -40 to +125 8 Ld SOIC
ISL21009CFB812Z 1.25 ±1.0mV, 5ppm/°C -40 to +125 8 Ld SOIC
ISL21009DFB812Z 1.25 ±2.0mV, 10ppm/°C -40 to +125 8 Ld SOIC
ISL21009BFB825Z 2.5 ±0.5mV, 3ppm/°C -40 to +125 8 Ld SOIC
ISL21009CFB825Z 2.5 ±1.0mV, 5ppm/°C -40 to +125 8 Ld SOIC
ISL21009DFB825Z 2.5 ±2.0mV, 10ppm/°C -40 to +125 8 Ld SOIC
ISL21009BFB841Z 4.096 ±0.5mV, 3ppm/°C -40 to +125 8 Ld SOIC
ISL21009CFB841Z 4.096 ±1.0mV, 5ppm/°C -40 to +125 8 Ld SOIC
ISL21009DFB841Z 4.096 ±2.0mV, 10ppm/°C -40 to +125 8 Ld SOIC
ISL21009BFB850Z 5 ±0.5mV, 3ppm/°C -40 to +125 8 Ld SOIC
ISL21009CFB850Z 5 ±1.0mV, 5ppm/°C -40 to +125 8 Ld SOIC
ISL21009DFB850Z 5 ±2.0mV, 10ppm/°C -40 to +125 8 Ld SOIC
ISL21009BFB850 应用技术支持与电子电路设计开发资源下载
  1. ISL21009BFB850 数据资料 datatSheet 下载.PDF
  2. pinPoint 系列产品选型指南 . pdf